Point defect distribution in high-mobility conductive SrTiO3 crystals

Gentils, A. and Copie, O. and Herranz, G. and Fortuna, F. and Bibes, M. and Bouzehouane, K. and Jacquet, E. and Carretero, C. and Basletić, Mario and Tafra, Emil and Hamzić, Amir and Barthelemy, A. (2010) Point defect distribution in high-mobility conductive SrTiO3 crystals. Physical Review B, 81 (14). pp. 144109-9. ISSN 1098-0121

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Abstract

We have carried out positron annihilation spectroscopy to characterize the spatial distribution and the nature of vacancy defects in insulating as-received as well as in reduced SrTiO3 substrates exhibiting high-mobility conduction. The substrates were reduced either by ion etching the substrate surfaces or by doping with vacancies during thin film deposition at low pressure and high temperature. We show that Ti-vacancies are native defects homogeneously distributed in as-received substrates. In contrast, the dominant vacancy defects are the same both in ion-etched and substrates reduced during the film growth, and they consist of non-homogeneous distributions of cation-oxygen vacancy complexes. Their spatial extension is tuned from a few microns in ion-etched samples to the whole substrate in specimens reduced during film deposition. Our results shed light on the transport mechanisms of conductive SrTiO3 crystals and on strategies for defect-engineered oxide quantum wells, wires and dots.

Item Type: Article
Keywords: positron annihilation, point defects, defect clusters, ion radiation effects
Date: April 2010
Subjects: NATURAL SCIENCES > Physics
Additional Information: Copyright (2010) by the American Physical Society.
Divisions: Faculty of Science > Department of Physics
Project code: 119-1191458-1023
Publisher: American Physical Society
Depositing User: Gordana Stubičan Ladešić
Date Deposited: 31 May 2014 22:06
Last Modified: 24 Feb 2016 15:35
URI: http://digre.pmf.unizg.hr/id/eprint/2047

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