Transport properties of holes in nanometer germanium transistor structures

Ivanić, Vedran (2014) Transport properties of holes in nanometer germanium transistor structures. Diploma thesis, Faculty of Science > Department of Physics.

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Abstract

Physics-based modeling of hole mobilities in ultra-thin germanium layers is calculated with self-consistent Schrodinger-Poisson solver and Kubo- Greenwood formula. Quantum confinement is taken into account for heavy, light and split-off hole band in a double-gate germanium MOSFET structure. Distribution of hole wave function is examined along with energy levels. Acoustic and optical phonon scattering is taken into consideration in the calculation of hole momentum relaxation time. The observed reduction of mobility in thinner layers is explained by examining the influence of fieldinduced and geometry-induced confinement. Contributions from different hole bands are investigated by calculating band population and respective band mobilities.

Item Type: Thesis (Diploma thesis)
Keywords: crystal lattice of germanium, Schrodinger-Poisson's simulator
Supervisor: Suligoj, Tomislav
Date: 26 September 2014
Number of Pages: 49
Subjects: NATURAL SCIENCES > Physics
Divisions: Faculty of Science > Department of Physics
Depositing User: Gordana Stubičan Ladešić
Date Deposited: 14 Oct 2014 09:36
Last Modified: 06 Sep 2016 15:27
URI: http://digre.pmf.unizg.hr/id/eprint/3034

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