Intraband memory function and memory-function conductivity formula in doped graphene

Kupčić, Ivan (2017) Intraband memory function and memory-function conductivity formula in doped graphene. Physical Review B, 95 (3). pp. 35403-13. ISSN 1098-0121

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Abstract

The generalized self-consistent field method is used to describe intraband relaxation processes in a general multiband electronic system with presumably weak residual electron-electron interactions. The resulting memory-function conductivity formula is shown to have the same structure as the result of a more accurate approach based on the quantum kinetic equation. The results are applied to heavily doped and lightly doped graphene. It is shown that the scattering of conduction electron by phonons leads to the redistribution of the intraband conductivity spectral weight over a wide frequency range, however, in a way consistent with the partial transverse conductivity sum rule. The present form of the intraband memory function is found to describe correctly the scattering by quantum fluctuations of the lattice, at variance with the semiclassical Boltzmann transport equations, where this scattering channel is absent. This is shown to be of fundamental importance in quantitative understanding of the reflectivity data measured in lightly doped graphene as well as in different low-dimensional strongly correlated electronic systems, such as the cuprate superconductors.

Item Type: Article
Keywords: memory functions, optical conductivity, quantum kinetic equations, self-consistent RPA equations, doped graphene
Date: 4 January 2017
Subjects: NATURAL SCIENCES > Physics
Additional Information: © 2017 American Physical Society. Received 21 October 2016. Published 4 January 2017.
Divisions: Faculty of Science > Department of Physics
Project code: 119-1191458-0512
Publisher: American Physical Society
Depositing User: Gordana Stubičan Ladešić
Date Deposited: 28 Sep 2017 10:47
Last Modified: 28 Sep 2017 10:47
URI: http://digre.pmf.unizg.hr/id/eprint/5584

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