Electronic properties of hydrogen-doped (Zr_80 3d_20)_1-xH_x (3d = Fe, Co, Ni) metallic glasses

Kokanović, Ivan and Lukatela, Jagoda (1999) Electronic properties of hydrogen-doped (Zr_80 3d_20)_1-xH_x (3d = Fe, Co, Ni) metallic glasses. Fizika A, 8 (3). pp. 113-122. ISSN 1330-0008

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The electrical resistivities of hydrogen-doped (Zr_80 3d_20)_1-xH_x (3d = Fe, Co, Ni; x ≤ 0.11) metallic glasses have been measured at temperatures between 2 K and 290 K. The increase of the room-temperature resistivity and its temperature coefficient are explained as a consequence of increased disorder due to hydrogen-doping. The temperature dependence of the resistivity has been analysed using theoretical models of weak-localisation and electron-electron interaction in disordered three-dimensional conductors. The hydrogen dopant is found to reduce effective electron diffusion constant, D, the spin-orbit scattering rate, τ_so^-1, the superconducting transition temperature, T_c, and broadens the superconducting transition region. We discuss the effects of different hydrogen environments on T_c of (Zr_80 3d_20)_1-xH_x metallic glasses.

Item Type: Article
Keywords: electrical resistivity, metallic glasses, hydrogen-doped, disordered three-dimensional conductors, electron diffusion constant, spin-orbit scattering, superconducting transition temperature
Date: 1999
Subjects: NATURAL SCIENCES > Physics
Divisions: Faculty of Science > Department of Physics
Publisher: Hrvatsko fizikalno društvo
Depositing User: Gordana Stubičan Ladešić
Date Deposited: 14 Apr 2014 15:52
Last Modified: 14 Apr 2014 15:52
URI: http://digre.pmf.unizg.hr/id/eprint/810

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