Depolarization crossovers in the microwave response of silicon crystals in slab geometry

Babić, Bakir and Basletić, Mario and Dulčić, Antonije and Požek, Miroslav (2006) Depolarization crossovers in the microwave response of silicon crystals in slab geometry. Fizika A, 15 (1). pp. 25-34. ISSN 1330-0008

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Abstract

Microwave cavity perturbation measurements have been performed on several n-type silicon samples with different depolarization factors due to sample geometries. The general solution for the complex frequency shift in slab geometry is discussed for the specific case of semiconductors. The depolarization crossovers predicted by the theory have been experimentally observed. Their relative intensities suggest that the imaginary part of the complex conductivity of semiconductors has to be taken into account. Electron scattering time has been inferred from the microwave measurements.

Item Type: Article
Keywords: n-type silicon, slab geometry, microwave measurement, complex frequency shift, depolarization factors, electron scattering time
Date: 2006
Subjects: NATURAL SCIENCES > Physics
Divisions: Faculty of Science > Department of Physics
Publisher: Hrvatsko fizikalno društvo
Depositing User: Gordana Stubičan Ladešić
Date Deposited: 15 Apr 2014 17:51
Last Modified: 15 Apr 2014 17:51
URI: http://digre.pmf.unizg.hr/id/eprint/861

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